Reuters reported on 18 October that Samsung Electronics will use TSMC’s three-nanometre process to make base dies for Nvidia’s next-generation custom high-bandwidth memory chips. It would be the first time Samsung has worked with TSMC at the HBM manufacturing stage, according to the report.
Nvidia asked Samsung, SK Hynix and Micron Technology to make NVHBM base dies using TSMC’s process, paired with core dies made using sixth generation DRAM technology, the report said. Nvidia says NVHBM, unveiled in August, puts its custom memory controller in the base die to standardise implementation across memory suppliers.
Samsung accepted Nvidia’s requirements after an internal review but plans to keep production in-house for standard HBM and custom products for other customers, Reuters reported. Samsung is also assessing whether its own foundry could make NVHBM base dies if demand exceeds TSMC’s capacity.
